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Bias voltage dependent scattering of the topological surface state is studiedby scanning tunneling microscopy/spectroscopy for a clean surface of thetopological insulator Bi$_2$Te$_2$Se. A strong warping of constant energycontours in the unoccupied part of the spectrum is found to lead to aspin-selective scattering. The topological surface state persists to higherenergies in the unoccupied range far beyond the Dirac point, where it coexistswith the bulk conduction band. This finding sheds light on the spin and chargedynamics over the wide energy range and opens a way to designingopto-spintronic devices.

Unoccupied topological surface state in Bi$_{2}$Te$_{2}$Se