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In our recent paper on possible shallow donors in ZnAl2O4 spinel, the defect formation energies of the native defects for different charge states were calculated using the GGA and hybrid HSE06 functional. The results were presented in Figs. 5 and 6, respectively, of the paper. However, due to a typographic error in the calculation of the chemical potentials, the figures have to be replaced by Figs. 5 and 6 below. The difficulty of the GGA functional to properly describe defect states remains essentially the same, e.g., the O vacancy is still predicted to be an amphoteric defect. Focusing on the conclusions regarding the HSE06 results (see Fig. 6), one can see that the antisite defect AlZn is still a shallow donor and the oxygen vacancy is still a deep donor. The other native defects are of the amphoteric type. The formation energy of the antisite defect AlZn has increased. In oxygen-rich conditions, it is still the donor with the lowest formation energy. However, under Zn-rich conditions, the oxygen vacancy has the lowest formation energy of all donors for Fermi values close to the conduction band minimum. Furthermore, due to the large band gap of ZnAl2O4 and

physical review. b, condensed matter and materials physics

Erratum: First-principles study of possible shallow donors in ZnAl<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>spinel [Phys. Rev. B<b>87</b>, 174101 (2013)]

Erratum: First-principles study of possible shallow donors in ZnAl2O4spinel [Phys. Rev. B87, 174101 (2013)]