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We present a magneto-photoluminescence study on neutral and charged excitonsconfined to InAs/GaAs quantum dots. Our investigation relies on a confocalmicroscope that allows arbitrary tuning of the angle between the appliedmagnetic field and the sample growth axis. First, from experiments on neutralexcitons and trions, we extract the in-plane and on-axis components of theLand\'e tensor for electrons and holes in the s-shell. Then, based on thedoubly negatively charged exciton magneto-photoluminescence we show that thep-electron wave function spreads significantly into the GaAs barriers. We alsodemonstrate that the p-electron g-factor depends on the presence of a hole inthe s-shell. The magnetic field dependence of triply negatively chargedexcitons photoluminescence exhibits several anticrossings, as a result ofcoupling between the quantum dot electronic states and the wetting layer.Finally, we discuss how the system evolves from a Kondo-Anderson excitondescription to the artificial atom model when the orientation of the magneticfield goes from Faraday to Voigt geometry.

From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots