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We fabricate free-standing graphene structures from epitaxial graphene on silicon carbide using a photoelectrochemical (PEC) etching process. A combination of Raman spectroscopy and magnetotransport measurements was used to investigate multi-terminal devices in various geometries. From the analysis of Raman data and Shubnikov-de Haas oscillations we conclude that the buffer layer is converted into a graphene layer and thus, monolayer graphene on SiC gets converted to a free-standing AB-stacked bilayer. The bilayer exhibits inversionsymmetry breaking because of differential doping between the layers. Additionally, lateral

Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer