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The quasiparticle (QP) band structures of both strainless and strainedmonolayer MoS$_{2}$ are investigated using more accurate many body perturbation\emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. Bysolving the Bethe-Salpeter equation (BSE) including excitonic effects on top ofthe partially self-consistent \emph{GW$_{0}$} (sc\emph{GW$_{0}$}) calculation,the predicted optical gap magnitude is in a good agreement with availableexperimental data. With increasing strain, the exciton binding energy is nearlyunchanged, while optical gap is reduced significantly. The sc\emph{GW$_{0}$}and BSE calculations are also performed on monolayer WS$_{2}$, similarcharacteristics are predicted and WS$_{2}$ possesses the lightest effectivemass at the same strain among monolayers Mo(S,Se) and W(S,Se). Our results alsoshow that the electron effective mass decreases as the tensile strainincreases, resulting in an enhanced carrier mobility. The present calculationresults suggest a viable route to tune the electronic properties of monolayertransition-metal dichalcogenides (TMDs) using strain engineering for potentialapplications in high performance electronic devices.

Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2