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We report on resistivity and Hall measurements performed on a series ofnarrow mesa devices fabricated from LaAlO_3/SrTiO_3 single interfaceheterostructure with a bridge width range of 1.5-10 microns. Upon applyingback-gate voltage of the order of a few Volts, a strong increase in the sampleresistance (up to factor of 35) is observed, suggesting a relatively largecapacitance between the Hall-bar and the gate. The high value of thiscapacitance is due to the device geometry, and can be explained within anelectrostatic model using the Thomas Fermi approximation. The Hall coefficientis sometimes a non-monotonic function of the gate voltage. This behavior isinconsistent with a single conduction band model. We show that a theoreticaltwo-band model is consistent with this transport behavior, and indicates ametal to insulator transition in at least one of these bands.

Anomalous response to gate voltage application in mesoscopic LaAlO_3/SrTiO_3 devices