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Random hyperfine fields are essential to mechanisms of low-fieldmagnetoresistance in organic semiconductors. Recent experiments have shown thatanother type of random field --- fringe fields due to a nearby ferromagnet ---can also dramatically affect the magnetoresistance. A theoretical analysis ofthe effect of these fringe fields is challenging, as the fringe fieldmagnitudes and their correlation lengths are orders of magnitude larger thanthat of the hyperfine couplings. We extend a recent theory of organicmagnetoresistance to calculate the magnetoresistance with both hyperfine andfringe fields present. This theory describes several key features of theexperimental fringe-field magnetoresistance, including the applied fields wherethe magnetoresistance reaches extrema, the applied field range of largemagnetoresistance effects from the fringe fields, and the sign of the effect.

Including fringe fields from a nearby ferromagnet in a percolation theory of organic magnetoresistance