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Using angle-resolved photoelectron spectroscopy and ab-initio GWcalculations, we unambiguously show that the widely investigatedthree-dimensional topological insulator Bi2Se3 has a direct band gap at theGamma point. Experimentally, this is shown by a three-dimensional band mappingin large fractions of the Brillouin zone. Theoretically, we demonstrate thatthe valence band maximum is located at the Brillouin center only if many-bodyeffects are included in the calculation. Otherwise, it is found in ahigh-symmetry mirror plane away from the zone center.

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment