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We report on the transport properties of clean, epitaxial Fe(Se,Te) thinfilms prepared on Fe-buffered MgO (001) single crystalline substrates by pulsedlaser deposition. Near Tc a steep slope of the upper critical field for H||abwas observed (74.1 T/K), leading to a very short out-of-plane coherence length,\xi c, of 0.2 nm, yielding 2\xi c(0) approximately 0.4 nm. This value isshorter than the interlayer distance (0.605 nm) between Fe-Se(Te) planes,indicative of modulation of the superconducting order parameter along thec-axis. An inverse correlation between the power law exponent N of the electricfield-current density (E-J) curve and the critical current density, Jc, hasbeen observed at 4 K, when the orientation of H was close to the ab-plane.These results prove the presence of intrinsic pinning in Fe(Se,Te). Asuccessful scaling of the angular dependent Jc and the corresponding exponent Ncan be realized by the anisotropic Ginzburg Landau approach with appropriate\Gamma values 2~3.5. The temperature dependence of \Gamma behaves almostidentically to that of the penetration depth anisotropy.

Intrinsic pinning and the critical current scaling of clean epitaxial Fe(Se,Te) thin films