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Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunneljunctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm <$t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. Theapplication of an RF current into nanosized MTJs generates a DC mixing voltageacross the device when the frequency is in resonance with the resistanceoscillations arising from the spin transfer torque. Magnetization precession inthe free and reference layers of the MTJs is analyzed by comparing ST-FMRsignals with macrospin and micromagnetic simulations. From ST-FMR spectra atdifferent DC bias voltage, the in-plane and perpendicular torkances arederived. The experiments and free-electron model calculations show that theabsolute torque values are independent of tunnel barrier thickness. Theinfluence of coupling between the free and reference layer of the MTJs on theST-FMR signals and the derived torkances are discussed.

Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions