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We present a microscopic theory of the magnetic field induced mixing ofheavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. Theproposed theoretical model takes into account the striking dot shape withtrigonal symmetry revealed in atomic force microscopy. Our calculations of thehole states are carried out within the Luttinger Hamiltonian formalism,supplemented with allowance for the triangularity of the confining potential.They are in quantitative agreement with the experimentally observedpolarization selection rules, emission line intensities and energy splittingsin both longitudinal and transverse magnetic fields for neutral and chargedexcitons in all measured single dots.

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots