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Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dotswith ringlike shape are investigated. Similar to experimental self-assembledquantum rings, the analyzed quantum dots have volcano-like shapes. Thecontinuum mechanical model is employed to determine the strain distribution,and the single-band envelope function approach is adopted to compute theelectron states. The hole states are determined by the axially symmetricmultiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained froman exact diagonalization. We found that the presence of the inner layercovering the ring opening enhances the excitonic Aharonov-Bohm (AB)oscillations. The reason is that the hole becomes mainly localized in the innerpart of the quantum dot due to strain, whereas the electron resides mainlyinside the ring-shaped rim. Interestingly, larger AB oscillations are found inthe analyzed quantum dot than in a fully opened quantum ring of the same width.Comparison with the unstrained ring-like quantum dot shows that the amplitudeof the excitonic Aharonov-Bohm oscillations are almost doubled in the presenceof strain. The computed oscillations of the exciton energy levels arecomparable in magnitude to the oscillations measured in recent experiments.

Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In(Ga)As/GaAs ringlike quantum dots