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Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk anddouble quantum well interband tunnel heterojunctions are simulated rigorouslyusing the non-equilibrium Green's function formalism for coherent anddissipative quantum transport in combination with a simple two-bandtight-binding model for the electronic structure. A realistic band profile andassociated built-in electrostatic field is obtained via self-consistentcoupling of the transport formalism to Poisson's equation. The model reproducesexperimentally observed features in the current-voltage characteristics of thedevice, such as the structure appearing in the negative differential resistanceregime due to quantization of emitter states. Local maps of density of statesand current spectrum reveal the impact of quasi-bound states, electric fieldsand electron-phonon scattering on the interband tunneling current. In this way,resonances appearing in the current through the double quantum well structurein the negative differential resistance regime can be related to the alignmentof subbands in the coupled quantum wells.

physical review. b, condensed matter and materials physics

Theoretical investigation of direct and phonon-assisted tunneling  currents in InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions  for multi-junction solar cells