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We present detailed low-temperature scanning tunneling spectroscopy (STS) investigations of the local electronic density of states (DOS) on the fivefold and twofold i-Al70Pd21Mn9; pseudo tenfold. xi'-Al72Pd25Mn3; tenfold d-Al77Ni17Co6; twofold-(12110) d-Al72.9Ni10.4Co16.7; (100) Y-Al75.8Ni2.1Co22.1; and (111) Al surface in the range of +/- 1 eV around the Fermi energy. All these quasicrystals and approximants exhibit the theoretically predicted electronic pseudogap. We observe no evidence for a correlation between the depth of this pseudogap, as measured by STS, and the remarkably high electrical resistivity of the investigated quasicrystals and approximants. A parametrization of the spatial variability of STS spectra is introduced as a measure of the magnitude of the electron localization for a given system. The resulting (S) over cap parameter is found to be proportional to the square root of the electrical resistivity. This finding supports the validity of interpreting spatial variations of fine-structure features in the STS spectra of Al-based quasicrystals and approximants in terms of electron localization.

Correlating scanning tunneling spectroscopy with the electrical resistivity of Al-based quasicrystals and approximants