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Bismuth (209Bi) is the deepest Group V donor in silicon and possesses themost extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfinecoupling. These lead to several potential advantages for a Si:Bi donor electronspin qubit compared to the more common phosphorus donor. Previous studies onSi:Bi have been performed using natural silicon where linewidths and electronspin coherence times are limited by the presence of 29Si impurities. Here wedescribe electron spin resonance (ESR) and electron nuclear double resonance(ENDOR) studies on 209Bi in isotopically pure 28Si. ESR and ENDOR linewidths,transition probabilities and coherence times are understood in terms of thespin Hamiltonian parameters showing a dependence on field and mI of the 209Binuclear spin. We explore various decoherence mechanisms applicable to the donorelectron spin, measuring coherence times up to 700 ms at 1.7 K at X-band,comparable with 28Si:P. The coherence times we measure follow closely thecalculated field-sensitivity of the transition frequency, providing a strongmotivation to explore 'clock' transitions where coherence lifetimes could befurther enhanced.

Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si