English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We investigate the low temperature electron transport properties ofchemically reduced graphene oxide (RGO) sheets with different carbon sp2fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, thetemperature (T) dependent resistance (R) of all the devices followEfros-Shklovskii variable range hopping (ES-VRH) R ~ exp[(T(ES)/T)^1/2] withT(ES) decreasing from 30976 to 4225 K and electron localization lengthincreasing from 0.46 to 3.21 nm with increasing sp2 fraction. From our data, wepredict that for the temperature range used in our study, Mott-VRH may not beobserved even at 100 % sp2 fraction samples due to residual topological defectsand structural disorders. From the localization length, we calculate a bandgapvariation of our RGO from 1.43 to 0.21 eV with increasing sp2 fraction from 55to 80 % which agrees remarkably well with theoretical prediction. We also showthat, in the high bias regime, the hopping is field driven and the data followR ~ exp[(E(0)/E)^1/2] providing further evidence of ES-VRH.

Efros-Shklovskii variable range hopping in reduced graphene oxide sheets of varying carbon sp2 fraction