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Epitaxial strain plays an important role in determining physical propertiesof perovskite ferroelectric oxide thin films. However, it is very challengingto directly measure properties such as polarization in ultrathin strained filmsusing traditional sandwich capacitor devices, because of high leakage current.We employed a planar electrode device with different crystallographicalorientations between electrodes along different electric field orientation todirectly measure the in-plane polarization-electric field (P-E) hysteresisloops in fully strained thin films. At high misfit strains such as -4.4%, thepure Tetrogonal-like phase is obtained and its polarization vector isconstrained to lie in the (010) plane with a significantly large in-planecomponent, ~44 {\mu}C/cm2. First-principle calculations are carried out inparallel, and provide a good agreement with the experimental results. Ourresults pave the way to design in-plane devices based on T-like BFO and thestrategy proposed here can be expanded to study all other similar strainedmultiferroic ultrathin films.

Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin films using planar electrodes