English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present a correlative study of structural and optical properties ofnatural defects in planar semiconductor microcavities grown by molecular beamepitaxy, which are showing a localized polariton spectrum as reported in Zajacet al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structureof the defects was studied using combined focussed ion beam (FIB) and scanningelectron microscopy (SEM). We find that the defects originate from a localincrease of a GaAs layer thickness. Modulation heights of up to 140nm for ovaldefects and 90nm for round defects are found, while the lateral extension isabout 2um for oval and 4um for round defects. The GaAs thickness increase isattributed to Ga droplets deposited during growth due to Ga cell spitting.Following the droplet deposition, the thickness modulation expands laterallywhile reducing its height, yielding oval to round mounds of the interfaces andthe surface. With increasing growth temperature, the ellipticity of the moundsis decreasing and their size is increasing. This suggests that the expansion isrelated to the surface mobility of Ga, which with increasing temperature isincreasing and reducing its anisotropy between the [110] and [1-10]crystallographic directions. Comprehensive data consisting of surface profilesof defects measured using differential interference contrast (DIC) microscopy,volume information obtained using FIB/SEM, and characterization of theresulting confined polariton spectrum are presented.

Structure and zero-dimensional polariton spectrum of natural defects in GaAs/AlAs microcavities