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We numerically investigate the impact of boron nitride (BN) domains on thetransport properties of graphene nanoribbons with lengths ranging from a few toseveral hundreds of nanometers and lateral size up to 4 nm. By varying the sizeand morphology of the BN islands embedded in the graphene matrix, a widetransport tunability is obtained from perfect insulating interfaces toasymmetric electron-hole transmission profiles, providing the possibility toengineer mobility gaps to improve device performances. Even in the low-densitylimit of embedded BN islands, transport properties are found to be highlydependent on both the BN-domain shape and the size with a strong tendencytoward an insulating regime when increasing the number of ionic bonds in theribbon. This versatility of conduction properties offers remarkableopportunities for transport gap engineering for the design of complex devicearchitectures based on a newly synthesized one-atom hybrid layered material.

Embedded Boron Nitride Domains In Graphene Nanoribbons For Transport Gap Engineering