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Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAsheterostructures impedes the development of nanoscale hole devices, which areof interest for topics from quantum computing to novel spin physics. We presentan extended study conducted using custom-grown, matched modulation-doped n-typeand p-type heterostructures, with/without insulated gates, aimed atunderstanding the origin of the hysteresis. We show the hysteresis is not dueto the inherent `leakiness' of gates on p-type heterostructures, as commonlybelieved. Instead, hysteresis arises from a combination of GaAs surface-statetrapping and charge migration in the doping layer. Our results provide insightsinto the physics of Si acceptors in AlGaAs/GaAs heterostructures, includingwidely-debated acceptor complexes such as Si-X. We propose methods formitigating the gate hysteresis, including poisoning the modulation-doping layerwith deep-trapping centers (e.g., by co-doping with transition metal species),and replacing the Schottky gates with degenerately-doped semiconductor gates toscreen the conducting channel from GaAs surface-states.

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures