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Transparent electronic materials are increasingly in demand for a variety ofoptoelectronic applications. BaSnO3 is a semiconducting oxide with a large bandgap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibitsunusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature andsuperior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys.Express. 5, 061102 (2012)]. Following that work, we report various physicalproperties of (Ba,La)SnO3 single crystals and films includingtemperature-dependent transport and phonon properties, optical properties andfirst-principles calculations. We find that almost doping-independent mobilityof 200-300 cm^2(Vs)^-1 is realized in the single crystals in a broad dopingrange from 1.0x10^19 to 4.0x10^20 cm^-3. Moreover, the conductivity of ~10^4ohm^-1cm^-1 reached at the latter carrier density is comparable to the highestvalue. We attribute the high mobility to several physical properties of(Ba,La)SnO3: a small effective mass coming from the ideal Sn-O-Sn bonding,small disorder effects due to the doping away from the SnO2 conduction channel,and reduced carrier scattering due to the high dielectric constant. Theobservation of a reduced mobility of ~70 cm^2(Vs)^-1 in the film is mainlyattributed to additional carrier-scatterings which are presumably created bythe lattice mismatch between the substrate SrTiO3 and (Ba,La)SnO3. The mainoptical gap of (Ba,La)SnO3 single crystals remained at about 3.33 eV and thein-gap states only slightly increased, thus maintaining optical transparency inthe visible region. Based on these, we suggest that the doped BaSnO3 systemholds great potential for realizing all perovskite-based, transparenthigh-frequency high-power functional devices as well as highly mobiletwo-dimensional electron gas via interface control of heterostructured films.

Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature