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Recent experiments on resonant tunneling structures comprising (Ga,Mn)Asquantum wells [Ohya et al., Nature Physics 7, 342 (2011)] have evoked a strongdebate regarding their interpretation as resonant tunneling features and thenear absences of ferromagnetic order observed in these structures. Here, wepresent a related theoretical study of a GaAs/(Ga,Mn)As double barrierstructure based on a Green's function approach, studying the self-consistentinterplay between ferromagnetic order, structural defects (disorder), and thehole tunnel current under conditions similar to those in experiment. We showthat disorder has a strong influence on the current-voltage characteristics inefficiently reducing or even washing out negative differential conductance,offering an explanation for the experimental results. We find that for the Belead doping levels used in experiment the resulting spin density polarizationin the quantum well is too small to produce a sizable exchange splitting.

Disorder effects on resonant tunneling transport in GaAs/(Ga,Mn)As heterostructures