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Understanding interactions between orbital and valley quantum states insilicon nanodevices is crucial in assessing the prospects of spin-based qubits.We study the energy spectra of a few-electron silicon metal-oxide-semiconductorquantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. Theoccupancy of the quantum dot is probed down to the single-electron level usinga nearby single-electron transistor as a charge sensor. The energy of the firstorbital excited state is found to decrease rapidly as the electron occupancyincreases from N=1 to 4. By monitoring the sequential spin filling of the dotwe extract a valley splitting of ~230 {\mu}eV, irrespective of electron number.This indicates that favorable conditions for qubit operation are in place inthe few-electron regime.

Orbital and valley state spectra of a few-electron silicon quantum dot