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The pumping intensity (I) dependence of the photoluminescence (PL) spectra ofperfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001)substrates was studied. The PL results from recombinations of holes localizedin the SiGe quantum dots and electrons localized due to the strain field in thesurrounding Si matrix. The analysis of the spectra revealed several distinctbands, attributed to phonon-assisted recombination and no-phonon recombinationof the excitonic ground state and of the excited excitonic states, which allexhibit a linear I dependence of the PL intensity. At approximately I>3W/cm^2,additional bands with a nearly quadratic I dependence appear in the PL spectra,resulting from biexcitonic transitions. These emerging PL contributions shiftthe composite no-phonon PL band of the SiGe quantum dots to higher energies.The experimentally obtained energies of the no-phonon transitions are in goodagreement with the exciton and biexciton energies calculated using the envelopefunction approximation and the configuration interaction method.

physical review. b, condensed matter and materials physics

Excitation intensity dependence of photoluminescence spectra of SiGe  quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic  transition