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Electronic and structural phenomena at the twin domain wall-surface junctionsin the ferroelastic materials are analyzed. Carriers accumulation caused by thestrain-induced band structure changes originated via the deformation potentialmechanism, structural order parameter gradient, rotostriction and flexoelectriccoupling is explored. Approximate analytical results show that inhomogeneouselastic strains, which exist in the vicinity of the twin walls - surfacejunctions due to the rotostriction coupling, decrease the local band gap viathe deformation potential and flexoelectric coupling mechanisms. This is thedirect mechanism of the twin walls static conductivity in ferroelastics and, byextension, in multiferroics and ferroelectrics. On the other hand,flexoelectric and rotostriction coupling leads to the appearance of theimproper polarization and electric fields proportional to the structural orderparameter gradient in the vicinity of the twin walls - surface junctions. The"flexo-roto" fields leading to the carrier accumulation are considered asindirect mechanism of the twin walls conductivity. Comparison of the direct andindirect mechanisms illustrates complex range of phenomena directly responsiblefor domain walls static conductivity in materials with multiple orderparameters.

physical review. b, condensed matter and materials physics

Conductivity of twin walls - surface junctions in ferroelastics:  interplay of deformation potential, octahedral rotations, improper  ferroelectricity and flexoelectric coupling