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We investigate temperature dependent transport properties of two-dimensionalp-GaAs systems taking into account both hole-phonon and hole-impurityscattering effects. By analyzing the hole mobility data of p-GaAs in thetemperature range 10 K$<T<$100 K, we estimate the value of the appropriatedeformation potential for hole-phonon coupling. Due to the interplay betweenhole-phonon and hole-impurity scattering the calculated temperature-dependentresistivity shows interesting nonmonotonic behavior. In particular, we findthat there is a temperature range (typically 2 K$<T<$10 K) in which thecalculated resistivity becomes independent of temperature due to a subtlecancellation between the temperature dependent resistive scatteringcontributions arising from impurities and phonons. This resistivity saturationregime appears at low carrier densities when the increasing resistivity due tophonon scattering compensates for the decreasing resistivity due to thenondegeneracy effect. This temperature-independent flat resistivity regime isexperimentally accessible and may have already been observed in a recentexperiment.

Interplay between phonon and impurity scattering in 2D hole transport