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We experimentally investigate the temperature (T) dependence of theresistance of a classical ballistic point contact (PC) in a two-dimensionalelectron system (2DES). The split-gate PC is realized in a high-qualityAlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, theT dependence is roughly linear below 2 K and tends to saturate at higher T.Perpendicular magnetic fields on the order of a few 10 mT suppress theT-dependent contribution dR. This effect is more pronounced at lowertemperatures, causing a crossover to a nearly parabolic T dependence in amagnetic field. The normalized magnetic field dependencies dR(B) permit anempiric single parameter scaling in a wide range of PC gate voltages. Theseobservations give strong evidence for the influence of electron-electron (e-e)scattering on the resistance of ballistic PCs. Our results are in qualitativeagreement with a recent theory of the e-e scattering based T dependence of theconductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) andPhys. Rev. B 81 125316 (2010)].

physical review. b, condensed matter and materials physics

Influence of e-e scattering on the temperature dependence of the  resistance of a classical ballistic point contact in a two-dimensional  electron system