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We investigate the energy relaxation of hot carriers produced byphotoexcitation of graphene through coupling to both intrinsic and remote(substrate) surface polar phonons using the Boltzmann equation approach. Wefind that the energy relaxation of hot photocarriers in graphene on commonlyused polar substrates, under most conditions, is dominated by remote surfacepolar phonons. We also calculate key characteristics of the energy relaxationprocess, such as the transient cooling time and steady state carriertemperatures and photocarriers densities, which determine the thermoelectricand photovoltaic photoresponse, respectively. Substrate engineering can be apromising route to efficient optoelectronic devices driven by hot carrierdynamics.

Cooling of photoexcited carriers in graphene by internal and substrate phonons