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The negatively charged nitrogen-vacancy (NV-) center in diamond is anattractive candidate for applications that range from magnetometry to quantuminformation processing. Here we show that only a fraction of the nitrogen(typically < 0.5 %) incorporated during homoepitaxial diamond growth byChemical Vapor Deposition (CVD) is in the form of undecorated NV- centers.Furthermore, studies on CVD diamond grown on (110) oriented substrates show anear 100% preferential orientation of NV- centers along only the [111] and[-1-11] directions, rather than the four possible orientations. The resultsindicate that NV centers grow in as units, as the diamond is deposited, ratherthan by migration and association of their components. The NV unit of the NVH-is similarly preferentially oriented, but it is not possible to determinewhether this defect was formed by H capture at a preferentially aligned NVcenter or as a complete unit. Reducing the number of NV orientations from 4orientations to 2 orientations should lead to increased optically-detectedmagnetic resonance contrast and thus improved magnetic sensitivity inensemble-based magnetometry.

Production of oriented nitrogen-vacancy color centers in synthetic diamond