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The electronic properties of twisted bilayer graphene on SiC substrate werestudied via combination of transport measurements and scanning tunnelingmicroscopy. We report the observation of enhanced intervalley scattering fromone Dirac cone to the other, which contributes to weak localization, of thetwisted bilayer graphene by increasing the interlayer coupling strength. Ourexperiment and analysis demonstrate that the enhanced intervalley scattering isclosely related to the periodic AB stacked atoms (the A atom of layer 1 and theB atom of layer 2 that have the same horizontal positions) that break thesublattice degeneracy of graphene locally. We further show that these periodicAB stacked atoms affect intervalley but not intravalley scattering. The resultreported here provides an effective way to atomically manipulate theintervalley scattering of graphene.

Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms