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Light-matter coupling is investigated by rotating, by an angle \theta, thepolarization of linearly polarized microwaves with respect to the long-axis ofGaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experimentsshow a strong sinusoidal variation in the diagonal resistance R_{xx} vs. \thetaat the oscillatory extrema, indicating a linear polarization sensitivity in themicrowave radiation-induced magnetoresistance oscillations. Surprisingly, thephase shift \theta_{0} for maximal oscillatory R_{xx} response underphotoexcitation appears dependent upon the radiation-frequency f, the extremumin question, and the magnetic field orientation or sgn(B).

Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations