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We examine the quantum Hall effect in bilayer graphene grown on Cu substratesby chemical vapor deposition. Spatially resolved Raman spectroscopy suggests amixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains.Magnetotransport measurements performed on bilayer domains with a wide 2D bandreveal quantum Hall states (QHSs) at filling factors $\nu=4, 8, 12$ consistentwith a Bernal stacked bilayer, while magnetotransport measurements in bilayerdomains defined by a narrow 2D band show a superposition of QHSs of twoindependent monolayers. The analysis of the Shubnikov-de Haas oscillationsmeasured in twisted graphene bilayers provides the carrier density in eachlayer as a function of the gate bias and the inter-layer capacitance.

Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition