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By eliminating normal fabrication processes, we preserve the bulk insulatingstate of calcium-doped Bi2Se3 single crystals in suspended nanodevices, asindicated by the activated temperature dependence of the resistivity at lowtemperatures. We perform low-energy electron beam irradiation (<16 keV) andelectrostatic gating to control the carrier density and therefore the Fermilevel position in the nanodevices. In slightly p-doped Bi2-xCaxSe3 devices,continuous tuning of the Fermi level from the bulk valence band to the band-gapreveals dramatic enhancement (> a factor of 10) in the field-effect mobility,which suggests suppressed backscattering expected for the Dirac fermion surfacestates in the gap of topological insulators.

Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3