English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Using the nonequilibrium Green function formalism combined with densityfunctional theory, we study finite-bias quantum transport in Ni/Gr_n/Nivertical heterostructures where $n$ graphene layers are sandwiched between twosemi-infinite Ni(111) electrodes. We find that recently predicted "pessimistic"magnetoresistance of 100% for $n \ge 5$ junctions at zero bias voltage $V_b\rightarrow 0$, persists up to $V_b \simeq 0.4$ V, which makes such devicespromising for spin-torque-based device applications. In addition, for parallelorientations of the Ni magnetizations, the $n=5$ junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from $V_b=0$V to $V_b \simeq 0.5$ V. We confirm that both of these nonequilibrium effectshold for different types of bonding of Gr on the Ni(111) surface whilemaintaining Bernal stacking between individual Gr layers.

physical review. b, condensed matter and materials physics

Magnetoresistance and negative differential resistance in Ni/Graphene/Ni  vertical heterostructures driven by finite bias voltage: A first-principles  study