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BaPb$_{1-x}$Bi$_x$O$_3$ is found to exhibit a field-tuned superconductor toinsulator transition for Bi compositions 0.24 $\leq x \leq$ 0.29. Themagnetoresistance of optimally doped samples manifests atemperature-independent crossing point and scaling of the form$\rho(T,H)=\rho_c F(|H-H_{c}|T^{-1/z\nu})$, where $H_c$ is the field determinedby the temperature-independent crossing point, and $z\nu$ = 0.69 $\pm$ 0.03.High resolution transmission electron microscopy measurements reveal a complexintergrown nanostructure comprising tetragonal and orthorhombic polymorphs.Data are analyzed in terms of both a classical effective medium theory and afield-tuned quantum phase transition, neither of which provides a completelysatisfactory explanation for this remarkable phenomenology.

Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3