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We report the effect of Sn doping on the transport properties of thetopological insulator Bi_{2}Te_{2}Se studied in a series ofBi_{2-x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undopedstoichiometric compound (x = 0) shows an n-type metallic behavior with itsFermi level pinned to the conduction band. In the doped compound, it is foundthat Sn acts as an acceptor and leads to a downshift of the Fermi level. For x\geq 0.004, the Fermi level is lowered into the bulk forbidden gap and thecrystals present a resistivity considerably larger than 1 Ohmcm at lowtemperatures. In those crystals, the high-temperature transport properties areessentially governed by thermally-activated carriers whose activation energy is95-125 meV, which probably signifies the formation of a Sn-related impurityband. In addition, the surface conductance directly obtained from theShubnikov-de Haas oscillations indicates that a surface-dominated transport canbe achieved in samples with several um thickness.

Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping