English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We study the superconducting proximity effect between a conventionalsemiconductor and a disordered s-wave superconductor. We calculate theeffective momentum relaxation rate in the semiconductor due to processesinvolving electron tunneling into a disordered superconductor and scatteringoff impurities. The magnitude of the effective disorder scattering rate isimportant for understanding the stability of the topological (chiral p-wave)superconducting state that emerges in the semiconductor, since disorderscattering has a detrimental effect and can drive the system into anon-topological state. We find that the effective impurity scattering rateinvolves higher-order tunneling processes and is suppressed due to thedestructive quantum interference of quasi-particle and quasi-hole trajectories.We show that, despite the fact that both the proximity-induced gap and theeffective impurity scattering rate depend on interface transparency, there is alarge parameter regime where the topological superconducting phase is robustagainst disorder in the superconductor. Thus, we establish that the staticdisorder in the superconductor does not suppress the proximity inducedtopological superconductivity in the semiconductor.

Momentum relaxation in a semiconductor proximity-coupled to a disordered s-wave superconductor: effect of scattering on topological superconductivity