English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Quantum dots are artificial atoms used for a multitude of purposes. Chargedefects are commonly present and can significantly perturb the designed energyspectrum and purpose of the dots. Voltage controlled exchange energy in silicondouble quantum dots (DQD) represents a system that is very sensitive to chargeposition and is of interest for quantum computing. We calculate the energyspectrum of the silicon double quantum dot system using a full configurationinteraction that uses tight binding single particle wavefunctions. Thisapproach allows us to analyze atomic scale charge perturbations of the DQDwhile accounting for the details of the complex momentum space physics ofsilicon (i.e., valley and valley-orbit physics). We analyze how the energylevels and exchange curves for a DQD are affected by nearby charge defects atvarious positions relative to the dot, which are consistent with defectsexpected in the metal-oxide-semiconductor system.

Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric