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In this paper, we develop an approximate theory of the temperaturecoefficient of resistivity (TCR) and conductivity based upon the recentlyproposed Microscopic Response Method. By introducing suitable approximationsfor the lattice dynamics, localized and extended electronic states, we producenew explicit forms for the conductivity and TCR, which depend on easilyaccessible material parameters. The theory is in reasonable agreement withexperiments on a-Si:H and a-Ge:H. A long-standing puzzle, a \textquotedblleftkink\textquotedblright\ in the experimental $% \log_{10}\sigma $ vs. 1/T curve,is predicted by the theory and attributed to localized to extended transitions,which have not been properly handled in earlier theories.

Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors