English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

There is growing interest in bismuth-doped silicon (Si:Bi) as an alternativeto the well-studied proposals for silicon based quantum information processing(QIP) using phosphorus-doped silicon (Si:P). We focus here on the implicationsof its anomalously strong hyperfine coupling. In particular, we analyse indetail the regime where recent pulsed magnetic resonance experiments havedemonstrated the potential for orders of magnitude speedup in quantum gates byexploiting transitions that are electron paramagnetic resonance (EPR) forbiddenat high fields. We also present calculations using a phenomenological Markovianmaster equation which models the decoherence of the electron spin due toGaussian temporal magnetic field perturbations. The model quantifies theadvantages of certain "optimal working points" identified as the $df/dB=0$regions, where $f$ is the transition frequency, which come in the form offrequency minima and maxima. We show that at such regions, dephasing due to theinteraction of the electron spin with a fluctuating magnetic field in the $z$direction (usually adiabatic) is completely removed.

Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits