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Room temperature ferromagnetism has been one of the most sought after topicsin today's emerging field of spintronics. It is strongly believed that defect-and inhomogeneity- free sample growth should be the optimal route for achievingroom-temperature ferromagnetism and huge efforts are made in order to growsamples as "clean" as possible. However, until now, in the dilute regime it hasbeen difficult to obtain Curie temperatures larger than that measured in wellannealed samples of (Ga,Mn)As ($\sim$190 K for 12% doping). In the presentwork, we propose an innovative path to room-temperature ferromagnetism indiluted magnetic semiconductors. We theoretically show that even a very smallconcentration of nanoscale inhomogeneities can lead to a tremendous boost ofthe critical temperatures: up to a 1600% increase compared to the homogeneouscase. In addition to a very detailed analysis, we also give a plausibleexplanation for the wide variation of the critical temperatures observed in(Ga,Mn)N and provide a better understanding of the likely origin of very highCurie temperatures measured occasionally in some cases. The colossal increaseof the ordering temperatures by nanoscale cluster inclusions should open up anew direction toward the synthesis of materials relevant for spintronicfunctionalities.

Nanoscale inhomogeneities: A new path toward high Curie temperature ferromagnetism in diluted materials