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V2O3 is an archetypal system for the study of correlation induced,Mott-Hubbard metal-insulator transitions. Despite decades of extensiveinvestigations, the accurate description of its electronic properties remainsan open problem in the physics of strongly correlated materials, also becauseof the lack of detailed experimental data on its electronic structure over thewhole phase diagram. We present here a high resolution X-ray absorptionspectroscopy study at the V K-edge of (V(1-x)Crx)2O3 to probe its electronicstructure as a function of temperature, doping and pressure, providing anaccurate picture of the electronic changes over the whole phase diagram. Wealso discuss the relevance of the parallel evolution of the lattice parameters,determined with X-ray diffraction. This allows us to draw two conclusions ofgeneral interest: first, the transition under pressure presents peculiarproperties, related to a more continuous evolution of the lattice andelectronic structure; second, the lattice mismatch is a good parameterdescribing the strength of the first order transition, and is consequentlyrelated to the tendency of the system towards the coexistence of differentphases. Our results show that the evolution of the electronic structure whileapproaching a phase transition, and not only while crossing it, is also a keyelement to unveil the underlying physical mechanisms of Mott materials .

Evolution of the electronic structure of a Mott system across its phase diagram: an X-ray absorption spectroscopy study of (V(1-x)Crx)2O3