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Holescanbereadilydopedintosmall-gapsemiconductorssuchasSiorGaAs,butcorresponding p-typedoping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO4 due to extrinsic (Mg) doping and, ultimately, a factor of 10 4 increase for the inverse spinel

physical review. b, condensed matter and materials physics

Inverse design approach to hole doping in ternary oxides: Enhancing<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type conductivity in cobalt oxide spinels

Inverse design approach to hole doping in ternary oxides: Enhancingp-type conductivity in cobalt oxide spinels