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Infrared transmission and electrical resistivity measurements reveal thatsingle crystals of LaMnPO$_{1-x}$F$_{x}$ (x $\leq$ 0.28) are insulating. Theoptical gap obtained from transmission measurements is nearly unaffected bydoping, decreasing only slightly from 1.3 eV in undoped LaMnPO to 1.1 eV for x= 0.04. The activation gaps obtained from electrical resistivity measurementsare smaller by at least an order of magnitude, signalling the presence ofstates within the optical gap. At low temperatures, the resistivity isdescribed well by variable range hopping conduction between these localized gapstates. Analysis of the hopping conduction suggests that the gap states becomeslightly more delocalized with fluorine content, although metallic conductionis not observed even for fluorine concentrations as large as x = 0.28.

Gap states in insulating LaMnPO$_{1-x}$F$_{x}$ (x = 0 - 0.3)