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We study electrical and thermoelectric transport properties of the surfacestate of the topological insulator and graphene in the presence of randomlydistributed impurities. For finite impurity strength, the dependence of thetransport coefficients as a function of gate voltage, magnetic field andimpurity potential, are obtained numerically. In the limit of zero impurities(clean limit), analytic results for the peak values of the magneto-oscillationsin thermopower are derived. Analogous with the conventional two dimensionalelectron gas, the peak values are universal in the clean limit. Unlikegraphene, in topological insulators the coupling of the electron spin to itsmomentum leads to a dependence of the transport coefficients on thegyromagnetic ratio ($g$). We compare our results with data on graphene andidentify unique signatures expected in topological insulators due to themagnetoelectric coupling.

Electric and thermoelectric transport in graphene and helical metal in finite magnetic fields