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Graphene-based materials show promise for spintronic applications due totheir potentially large spin coherence length. On the other hand, because oftheir small intrinsic spin-orbit interaction, an external magnetic source isdesirable in order to perform spin manipulation. Because of the flat nature ofgraphene, the proximity interaction with a ferromagnetic insulator (FI) surfaceseems a natural way to introduce magnetic properties into graphene. Exploitingthe peculiar electronic properties of bilayer graphene coupled with FIs, weshow that it is possible to devise very efficient gate-tunable spin-rotatorsand spin-filters in a parameter regime of experimental feasibility. We alsoanalyze the composition of the two spintronic building blocks in aspin-field-effect transistor.

Spintronic devices from bilayer graphene in contact to ferromagnetic insulators