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We demonstrate control by applied electric field of the charge states insingle self-assembled InP quantum dots placed in GaInP Schottky structuresgrown by metalorganic vapor phase epitaxy. This has been enabled by growthoptimization leading to suppression of formation of large dots uncontrollablyaccumulating charge. Using bias- and polarization-dependentmicro-photoluminescence, we identify the exciton multi-particle states andcarry out a systematic study of the neutral exciton state dipole moment andpolarizability. This analysis allows for the characterization of the excitonwavefunction properties at the single dot level for this type of quantum dots.Photocurrent measurements allow further characterization of exciton propertiesby electrical means, opening new possibilities for resonant excitation studiesfor such system.

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes