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We present a comprehensive study of vacancy and vacancy-impurity complexes inInN combining positron annihilation spectroscopy and ab-initio calculations.Positron densities and annihilation characteristics of common vacancy-typedefects are calculated using density functional theory and the feasibility oftheir experimental detection and distinction with positron annihilation methodsis discussed. The computational results are compared to positron lifetime andconventional as well as coincidence Doppler broadening measurements of severalrepresentative InN samples. The particular dominant vacancy-type positron trapsare identified and their characteristic positron lifetimes, Doppler ratiocurves and lineshape parameters determined. We find that In vacancies and theircomplexes with N vacancies or impurities act as efficient positron traps,inducing distinct changes in the annihilation parameters compared to the InNlattice. Neutral or positively charged N vacancies and pure N vacancy complexeson the other hand do not trap positrons. The predominantly introduced positrontrap in irradiated InN is identified as the isolated In vacancy, while inas-grown InN layers In vacancies do not occur isolated but complexed with oneor more N vacancies. The number of N vacancies per In vacancy in thesecomplexes is found to increase from the near surface region towards thelayer-substrate interface.

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: a case study of InN