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Cr2GeC thin films were grown by magnetron sputtering from elemental targets. Phase-pure Cr2GeC was grown directly onto Al2O3(0001) at temperatures of 700–800 ◦C. These films have an epitaxial component with the well-known epitaxial relationship Cr2GeC(0001)//Al2O3(0001) and Cr2GeC(112 ̄0)//Al2O3(11 ̄00) or Cr2GeC(112 ̄0)//Al2O3(1 ̄21 ̄0). There is also a large secondary grain population with (101 ̄3) orientation. Deposition onto Al2O3(0001) with a TiN(111) seed layer and onto MgO(111) yielded growth of globally epitaxial Cr2GeC(0001) with a virtually negligible (101 ̄3) contribution. In contrast to the films deposited at 700–800 ◦C, the ones grown at 500–600 ◦C are polycrystalline Cr2GeC with (101 ̄0)-dominated orientation; they also exhibit surface segregations of Ge as a consequence of fast Ge diffusion rates along the basal planes. The room-temperature resistivity of our samples is 53–66 μcm. Temperature-dependent resistivity measurements from 15–295 K show that electron-phonon coupling is important and likely anisotropic, which emphasizes that the electrical transport properties cannot be understood in terms of ground state electronic structure calculations only

physical review b

Epitaxial growth and electrical transport properties of Cr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>GeC thin films

Epitaxial growth and electrical transport properties of Cr2GeC thin films