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We present a defect-engineering strategy to optimize the transport propertiesof the topological insulator Bi2Se3 to show a high bulk resistivity and clearquantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cddoping and a Se-rich crystal-growth condition, we were able to observe ap-to-n-type conversion upon gradually increasing the Se vacancies by postannealing. With the optimal annealing condition where a high level ofcompensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and weobserved two-dimensional Shubnikov-de Haas oscillations composed of multiplefrequencies in magnetic fields below 14 T.

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping